[20p-D61-1~14] 10.1 Emerging materials in spintronics and magnetics (including fabrication and characterization methodologies)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[20p-D61-3] All-in-one evaluation method for transverse thermoelectric properties of a single magnetic thin film device

〇Takumi Yamazaki¹, Norihiko L. Okamoto¹, Tetsu Ichitsubo¹, Takeshi Seki^1,2 (1.IMR, Tohoku Univ., 2.CSIS, Tohoku Univ.)

Keywords:

spin caloritronics,transverse thermoelectric effect,thin film

Transverse thermoelectric conversion is a promising phenomenon for realizing the next-generation energy harvesting. We propose an all-in-one method to evaluate three key parameters that determine the transverse thermoelectric conversion performance of magnetic thin films: the transverse thermoelectric coefficient, electrical conductivity, and thermal conductivity. In this method, the transverse thermoelectric coefficient and thermal conductivity are determined by the temperature responses of two different phenomena, the anomalous Ettingshausen Effect (AEE) and Joule heating, respectively, while the electrical conductivity is measured using the four-terminal method. The thermal conductivity is obtained from the frequency response of periodic Joule heating, known as the 2ω method. To validate the thermal conductivity measurement, we measured the thermal conductivity of an Al-O thin film insulator, and the obtained value was comparable to those reported in previous studies. We also measured the temperature change induced by the AEE in a CoFeB thin film. The magnetic field dependence of the temperature change corresponded to the magnetization curve, which was consistent with the thermoelectric conversion symmetry of the AEE.