[20p-P02-1~29] 9 Applied Materials Science (Poster)

[20p-P02-16] Fabrication of n-type SnSe single crystals by solution growth method and evaluation of thermoelectric performance of the crystals

〇(M1)Goshi Nishizaki¹, Masakazu Mukaida², Qingshuo Wei², Kazuki Imasato², Michihiro Ohta², Masakatsu Hasegawa¹, Sakiko Kawanishi¹ (1.Kyoto Univ., 2.AIST)

Keywords:

thermoelectric materials,tin selenide,solution growth

SnSe is a cleavage layered compound with low thermal conductivity and excellent thermoelectric performance. Chang et al. reported that n-type Br-doped SnSe fabricated by Bridgman method has high thermoelectric properties with an out-of-plane performance index, ZT of 2.8 at 773 K. The authors fabricated Br-doped n-type SnSe by solution growth method. From the measurement of physical properties, it was confirmed that the thermal conductivity of SnSe by solution growth method was as low as that by Bridgman method, and the ZT was 0.06 at 348 K.