Presentation Information
[10a-N203-7]Semiquantitative interfacial characterization of HfxZr1-xO2/Si heterojunctions via terahertz emission spectroscopy
〇(D)TIANKAI JIA1, Haining Li2, Manjakavahoaka Razanoelina1, Takahiro Teramoto3, Takeshi Kijima2, Hiroyasu Yamahara2, Munetoshi Seki2, Hitoshi Tabata2, Masayoshi Tonouchi4, Iwao Kawayama1 (1.Kyoto Univ., 2.The Univ. of Tokyo, 3.The Univ. of Kitakyushu, 4.Okayama Univ.)
Keywords:
terahertz emission spectroscopy,hafnium zirconium oxide,interface state
Hafnium zirconium oxide (HfxZr1-xO2, HZO) is a promising high-k dielectric and ferroelectric material for next-generation semiconductor devices. The performance of HZO-based devices, particularly carrier transport, is strongly influenced by electric fields and defects at the HZO/Si interface. In our previous study, terahertz emission spectroscopy (TES) revealed that Zr-rich HZO thin films exhibited stronger THz emission, attributed to enhanced band bending induced by interface states, as shown in figure 1(a). The present work expands the investigation by analyzing the dependence of THz amplitude on gate voltage and fitting the experimental data using a theoretical model, as shown in figure 1(b). Through this fitting, we estimated the density of interface states and oxide traps across different HZO compositions. These findings demonstrate that TES is not only a sensitive, non-contact method for probing interface potential, but also a viable technique for extracting interfacial defect densities, providing new insights for optimizing high-k materials in CMOS applications.
This work was supported by JST, CREST Grant Number JPMJCR22O2, Japan.
This work was supported by JST, CREST Grant Number JPMJCR22O2, Japan.