Presentation Information
[10a-P03-15]Top-Emission Quantum-Dot Light-Emitting Diodes with Reduced Angular Dependence via Layer Thickness Engineering
〇Mian Wei1, Chengyi Chen1, Yumeng Song1, Yuqi Liang1, Lei Wang1, Huaibin Shen1 (1.Henan Univ.)
Keywords:
Quantum dot-light-emitting diode,Top emission,Angular dependence
Top-emitting QLEDs (TE-QLEDs) offer high aperture ratios and superior light extraction, making them promise for next-generation displays. [1,2] However, strong microcavity effect introduces angle-dependent emission, limiting image consistency in wide-viewing-angle applications. [3]
Here we present a simple yet effective strategy to mitigate this issue by tuning the thickness of the top electrode. High-performance TE-QLEDs were successfully fabricated via all-solution processing. By optimizing thickness of Ag electrode, the resulting TE-QLEDs achieve a current efficiency of 30 cd A-1 and a peak brightness of 57,100 cd m-2. The emission peak shifts by less than 2 nm as the viewing angle increases from 0° to 60°, and the color coordinate variation (Δu′v′) is significantly reduced compared to control devices. Our findings provide an effective approach toward high-efficiency, angle-stable TE-QLEDs for practical display applications.
Here we present a simple yet effective strategy to mitigate this issue by tuning the thickness of the top electrode. High-performance TE-QLEDs were successfully fabricated via all-solution processing. By optimizing thickness of Ag electrode, the resulting TE-QLEDs achieve a current efficiency of 30 cd A-1 and a peak brightness of 57,100 cd m-2. The emission peak shifts by less than 2 nm as the viewing angle increases from 0° to 60°, and the color coordinate variation (Δu′v′) is significantly reduced compared to control devices. Our findings provide an effective approach toward high-efficiency, angle-stable TE-QLEDs for practical display applications.