[7a-N403-1~9] 13.2 Exploratory Materials, Physical Properties, Devices

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)English Presentation

[7a-N403-4] Investigation of BaS hole transport layer for BaSi₂ thin film solar cells

〇(M2)Ammara Firdous¹, Koki Hayashi¹, Nurfauzi Abdillah¹, Yoichiro Koda², Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Tosoh Corp.)

Keywords:

BaSi2 solar cell,Point defects,hole transport layer (BaS)

Barium di-silicide (BaSi₂), composed of earth-abundant elements, is one of the suitable materials for thin-film solar cells due to its large absorption coefficient (α) of 3 × 10⁴ cm⁻¹, a band gap (E_g) of 1.3 eV, and excellent minority carrier properties [1-3]. To overcome the challenges of BaSi₂ solar cells, such as parasitic absorption at the surface due to large α and diffusion of impurities for p/n control, a new structural design, hole transport layer (HTL) /n-BaSi₂/ electron transport layer (ETL) has been proposed [4]. HTL requires that the E_g be larger than BaSi₂, and the ionization potential (IP) be close to or smaller than that of BaSi₂. Barium Sulfide (BaS) is a candidate material that satisfies these conditions (Fig. 1.) [5], but research reports are quite limited. Therefore, in this study, we evaluated the basic physical properties of BaS by calculation and experiment