Presentation Information
[7p-N205-2]Formation of nanoscale defect array in twisted hexagonal boron nitride
〇(P)Jacques Hawecker1, Prajakta Kokate1, Filchito Bagsican1, Marisa Hocking2, Kenji Watanabe3, Takashi Taniguchi3, Julien Madeo1, Michael K. L. Man1, Andrew J. Mannix2, Keshav M. Dani1 (1.OIST, 2.Stanford Univ, 3.NIMS)
Keywords:
2D material,photoemission,moire
Point defects in semiconductors have emerged as promising building block for quantum technologies. Deterministically positioning these defects into nanoscale arrays could enable scalable quantum information architectures. However, existing techniques for patterning nanoscale defect arrays (e.g., ion implantation, localized strain, laser writing) are limited by micron-scale precision and non-deterministic yield. A compelling alternative would be to spatially engineer the property of the material itself.In this talk, we present our latest results exploring the spatial distribution of defects in twisted hBN, a system that exhibits moiré ferroelectricity. Using photoemission electron microscopy (PEEM), we map the spatial distribution of occupied states at different energies including valence bands, defect states and ferroelectric domain walls. Surprisingly, we find that for small moiré period, photoemission-bright defects are located at domain wall nodes, forming arrays with pitch as small as ~200 nm. At larger moiré periods, the photoemission-bright defects align along entire domain walls. Photoluminescence shows that: most of the light emission comes from the photoemission-bright defects located along the domain walls, and that defects share spectral signatures with known C-based single quantum emitters. These findings highlight moiré ferroelectricity in twisted hBN as a new and powerful way to pattern quantum emitters down to the nanoscale.