Presentation Information
[8a-N307-3]Influence of O2 on the Fabrication of Ultra-High-Barrier SiNX Films via Solution Processing
〇Luyang Song1, He Sun1, Yoshiyuki Suzuri1 (1.Yamagata Univ.)
Keywords:
perhydropolysilazane (PHPS),wet process,VUV
To investigate the role of oxygen in the photochemical conversion of PHPS films, we irradiated samples with 172 nm VUV light under varying O2 concentrations (0–20%). FTIR analysis revealed a gradual decrease in Si–H and Si–N bonds and a corresponding increase in Si–O signals, indicating enhanced oxidation with increasing oxygen content. WVTR measurements showed that barrier performance remained excellent at low oxygen levels but degraded significantly beyond a critical concentration. Based on our previous finding that higher VUV intensity improves film quality, we further explored this effect under elevated irradiation conditions. These results highlight the need to carefully balance oxygen concentration and VUV intensity to optimize film structure and achieve scalable, high-performance SiNX barrier films.