[8p-N202-1~18] 3.13 Silicon photonics, Photonics-electronics convergence, Optical control

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)English Presentation

[8p-N202-7] Characteristics Comparison of Interlayer Couplers Between Silicon Oxynitride and Silicon Waveguide Layers

〇(D)Kaibin Yao¹, Moataz Eissa¹, Tsuyoshi Horikawa¹, Nobuhiko Nishiyama^1,2,3 (1.Science Tokyo Inst., 2.IIR, 3.PETRA)

Keywords:

interlayer coupler,SiON

Increasing complexity in Silicon-on-insulator (SOI) Photonic Integrated Circuits (PICs) demands three-dimensional circuit design with integrated materials[1]. Silicon oxynitride (SiON) is promising for multilayer SOI structures due to its broad spectral transparency, CMOS compatibility, and tunable refractive index (lower than SiN), which improves fabrication tolerance. Achieving efficient low-loss optical coupling between SiON and Si layers is crucial[2]. We designed and fabricated two types of interlayer couplers, which contain the directional coupler and inverse taper coupler. Experimentally, both coupler structures were confirmed to exhibit over 80% coupling efficiency.