[8p-N306-1~20] 12.2 Characterization and Materials Physics

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[8p-N306-1] Observation of conductive holes in organic transistors using operando photoemission electron microscopy

〇Kosuke Yoshikawa^1,2, Konoha Shimizu^1,2, Ryoma Hayakawa¹, Elizaveta Pyatenko³, Yoichi Yamada², Yutaka Wakayama¹, Keiki Fukumoto³ (1.NIMS, 2.Univ. Tsukuba, 3.KEK)

Keywords:

organic transistor,operando photoemission electron microscopy,conductive holes

The performance of semiconductor devices is determined by the behavior of charge carriers. Using operando photoelectron microscopy, we have previously visualized the behavior of conduction electrons in organic transistors and the formation of depletion layers at PN junction interfaces. However, although we have also attempted to observe conduction holes, clear detection has remained elusive. In this study, we successfully observed conduction holes by fabricating ultra-thin P-type transistors consisting of only 2–3 molecular layers and optimizing the excitation light energy.