[8p-P07-1~6] 4.3 Laser sources and Laser applications

English Presentation

[8p-P07-1] DOPING ENGINEERING IN LEAD HALIDE PEROVSKITES FOR OPTOELECTRONIC APPLICATIONS

〇(D)Ankit Sharma¹, Shaona Bose², Samit K Ray², K V Adarsh¹ (1.IISER Bhopal India, 2.IIT Kharagpur India)

Keywords:

Lead Halide Perovskite,Light-Matter interaction,Pump-probe

The study explores the optoelectronic properties of pristine and Cu-doped CsPbI₃ nanocrystals (NCs). Pristine CsPbI₃ NCs show rapid thermalization due to a quantum bottleneck effect after above-bandgap excitation, favoring efficient radiative recombination for light-emitting applications. In contrast, Cu-doped CsPbI₃ NCs exhibit slower thermalization, advantageous for photovoltaics by improving charge extraction and minimizing energy loss. Femtosecond laser excitation at 400 nm, 120 fs was used to probe hot carrier dynamics. Fluence-dependent transient absorption revealed many-body effects and thermalization behavior. At fluences 150 μJ/cm², pristine NCs showed rapid decay from phonon bottleneck breakdown via carrier-carrier scattering. Cu-doped NCs exhibited slower profiles, indicating suppressed many-body interactions and extended hot carrier lifetimes. These insights highlight dopant engineering's role in tailoring excited-state behavior for optoelectronic applications.