Presentation Information
[9a-N306-4]ESR study on charge carrier behavior and molecular orientation
in organic electrochemical transistors using n-type polymer BBL
〇Shogo Yamazaki1, Taiki Sakaguchi1, Wenhao He1, Yukihiro Shimoi1,2, Kazuhiro Marumoto1,2,3 (1.Dep. of Mater. Sci., Univ. of Tsukuba, 2.OIQSST, Univ. of Tsukuba, 3.TREMS, Univ. of Tsukuba)
Keywords:
organic electrochemical transistor,organic semiconductor,n-type semiconductor
An organic electrochemical transistor (OECT) based on the n-type organic semiconductor BBL was fabricated, and operando ESR measurements were performed to analyze the behavior of charge carriers during device operation. The formation of negative polarons was confirmed upon application of gate voltage, revealing charge accumulation at the molecular level. Furthermore, analysis of the angular dependence of the g-factor indicated that BBL molecules are predominantly oriented in an edge-on configuration.