Presentation Information
[9a-P04-10]SiC Formation on SiNW and Si Surface via Close Space Technique Carbonization
〇Pengyu ZHANG1,2, Wipakorn Jevasuwan1, Naoki Fukata1,2 (1.NIMS, 2.Tsukuba Univ.)
Keywords:
Silicon carbide,Nanostructures
Silicon carbide (SiC) has emerged as a promising wide-bandgap semiconductor for next-generation power and high-frequency electronics, owing to its large bandgap, high thermal conductivity, excellent chemical stability, and high breakdown field strength. However, the heteroepitaxial growth of high-quality, continuous SiC thin films on silicon (Si) substrates remains a critical challenge. Under low-pressure conditions, rapid gas-phase reactions between CH4, Si, and residual oxygen at elevated temperatures complicate process control, while Ar carrier gas can promote unwanted Si transport. To overcome these limitations, we introduce a modified close space technique (CST) that confines CH4/Ar flow between two boundary layers, suppressing undesired gas-phase reactions.