Presentation Information
[9a-P04-9]Positioning and Isolation of Al-Catalyzed Si Nanowire Formation Using Al Catalyst Nanoarrays Patterned by Nanoimprint Lithography
〇Wipakorn Jevasuwan1, Naoki Fukata1 (1.NIMS)
Keywords:
Nanowires,Nanoimprint,vapor-solid-liquid
One-dimensional nanowires (NWs) have garnered significant attention for their potential in high-efficiency solar cells and high electron mobility transistors (HEMTs) due to their exceptional electrical, optical, and mechanical properties. In our previous reports, vapor-liquid-solid (VLS) growth using aluminum (Al) as a catalyst was proposed to synthesize single-crystalline silicon (Si) NWs, effectively addressing the issue of metal catalyst contamination. The tuning of hole gas accumulation in the intrinsic germanium (i-Ge) shell region of unintentionally Al-doped p-Si/i-Ge core-shell nanowires (NWs), achieved through various core-multishell NW structure designs, has demonstrated promising progress toward vertical HEMT applications. However, for advanced device fabrications, the precise positioning and isolation of SiNW structures are essential for manufacturing. Therefore, in this study, we aim to tackle the challenge of achieving Al catalyst array nanopatterning with controllable size, position, and shape using nanoimprint lithography processes to facilitate the growth of SiNWs.