[9a-S103-1~9] 12.3 Functional Materials and Novel Devices

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-S103-9] Development of Reservoir Computing Devices
Using Oriented Nanofilms of Single-Walled Carbon Nanotubes

〇(M1)Jumpei Igarashi¹, Yuya Ishizaki², Shusaku Nagano², Hinako Ebe³, Jun Matsui³ (1.Grad. Sch. of Sci. and Eng., Yamagata Univ., 2.Dept. of Chem., Coll. of Sci., Rikkyou Univ., 3.Fac. of Sci., Yamagata Univ.)

Keywords:

Reservoir computing,Single walled carbon nanotube,Nano device

We propose using single-walled carbon nanotube (SWCNT) oriented thin films as the physical reservoir layer in reservoir computing (RC), and we fabricated nanodevices exhibiting nonlinear and hysteretic electrical properties. The oriented SWCNT films were prepared using the Langmuir–Blodgett (LB) method, and atomic force microscopy (AFM) analysis confirmed a high degree of orientation parallel to the compression barrier. Furthermore, current–voltage (I–V) measurements, fast Fourier transform (FFT) analysis, and waveform generation tasks suggested that these oriented thin films possess electrical characteristics suitable for application as a reservoir layer.