[9p-N303-1~10] KS.1 Solid State Quantum Sensor Group

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardHighlighted Presentation

[9p-N303-9] Highly efficient photoelectrical single-spin detection in 4H-SiC

〇Tetsuri Nishikawa¹, Naoya Morioka^1,2, Hiroshi Abe³, Koichi Murata⁴, Kazuki Okajima¹, Takeshi Ohshima^3,5, Hidekazu Tsuchida⁴, Norikazu Mizuochi^1,2,6 (1.ICR Kyoto Univ., 2.CSRN Kyoto Univ., 3.QST, 4.CRIEPI, 5.Tohoku Univ., 6.QUP KEK)

Keywords:

SiC,Single spin,PDMR

In the previous presentation, we have reported the electrical spin detection of a single silicon vacancy in 4H-SiC based on the photocurrent detected magnetic resonance (PDMR) technique. However, there has been a much larger spin-independent background than the spin-dependent signal, where the noise photocurrent in the background worsens the spin-readout efficiency. For practical applications, it is crucial to reduce the background and improve the spin-readout efficiency. Here, we focus on the photocurrent generation path of a silicon vacancy and achieve the superior spin-readout efficiency of PDMR to the conventional optical method, which has been predicted but not realized. In this presentation, we will report and discuss the details.