[10a-C212-1~8] 3.13 Silicon photonics, Photonics-electronics convergence, Optical control

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[10a-C212-6] III–V/Si Hybrid MOS Optical Phase Shifter Using Multi-Quantum Wells

〇(M2)Jinrui Guo¹, Tomohiro Akazawa¹, Wei Dai¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹ (1.Tokyo Univ.)

Keywords:

III-V/Si electro-optic phase shifter,multi-quantum wells,quantum-confined Stark effect

III–V/Si hybrid metal-oxide-semiconductor (MOS) optical phase shifters are promising for high-efficiency, high-speed, and low-power optical modulation. We propose a reverse-biased III–V/Si hybrid MOS optical phase shifter using multi-quantum wells (MQWs). The phase modulation induced by the quantum-confined Stark effect (QCSE) was numerically analyzed. The results showed that the QCSE-induced phase modulation corresponded to a VπL of 0.084 Vcm. Compared with the F-K-effect contribution in a reverse-biased MOS optical phase shifter, replacing bulk InGaAsP with MQWs reduced the VπL by nearly a factor of two. The III–V/Si hybrid MOS optical phase shifter using MQWs can further improve the optical phase modulation efficiency while maintaining the advantage of low capacitance.