[10a-E219-1~12] 2.1 Radiation physics, Material development and characteristic evaluation

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[10a-E219-8] Laser wavelength dependence of pulsed-laser-induced current signal of TlBr semiconductor detectors

〇Taisei Teshima¹, Seishiro Tanaka¹, Yusuke Kawai¹, Kenichi Watanabe¹, Mitsuhiro Nogami², Keitaro Hitomi² (1.Kyushu Univ., 2.Tohoku Univ.)

Keywords:

semiconductor detectors,thallium bromide

Measurements using the time-of-flight (TOF) method were performed to evaluate the charge transport characteristics of TlBr semiconductor detectors. In addition to the 405 nm laser used in previous studies, a 430 nm laser with a different absorption coefficient was employed to obtain laser-induced current signals, and the integrated values of the waveforms and their dependence on the applied voltage were compared. We report on the effects of different excitation wavelengths on charge collection characteristics.