Presentation Information
[10a-PA6-8]Statistical Analysis of Defect densities and Nitrogen Vacancy Center Population in a Chemical Vapor Deposition - Grown Diamond
〇(D)Samyuktha Nair1, Dwi Prananto1, Toshu An1 (1.JAIST)
Keywords:
Nitrogen Vacancy Centers,Quantum sensing,CVD diamond
Multiple Nitrogen Vacancy (NV) centers with nanometer-scale separations are highly promising as qubits as their close proximity enables coherent interactions enabling entanglement generation [1]. By applying a deliberately misaligned magnetic field to the NV axes, the frequency degeneracy of the four crystallographic axes is lifted, enabling the spectral isolation of distinct NV orientations. In this study, we use a CVD-grown diamond bulk sample providing elevated defect densities necessary for quantum sensing and entanglement architectures, mapping their orientation distributions remains critical [2]. This work quantifies the population densities of single, double, triple, and quadruple NV orientation classes in CVD grown systems. Ultimately, this approach establishes a robust metrology framework to optimize advanced diamond growth, benchmark nitrogen implantation efficiency, and maximize defect-formation yields.