Presentation Information
[10a-PB6-4]Flash Lamp Annealing for Efficient Recovery of Potential-Induced Degradation in Crystalline Silicon Solar Cells
〇(M1)Muhammad Adeel1, Kensaku Maeda1, Keisuke Ohdaira1 (1.JAIST)
Keywords:
solar cell,Potential Induced Degradation,PID Recovery
Conventional thermal treatments for potential-induced degradation (PID) require prolonged heating cycles that introduce unwanted thermal stress to photovoltaic module components. This study investigates millisecond-scale flash lamp annealing (FLA) as a low-thermal-budget alternative to rapidly restore cell performance. PID was induced on a bare 2x2 cm² n-type front-emitter crystalline silicon solar cell using a cell-level configuration (1000 V, 300 s, 85 °C). Post-degradation, FLA treatment was performed directly on the bare cell at a fluence of 19.3 J/cm² under a 450 °C stage preheating temperature in an Ar atmosphere. J-V characteristics revealed severe degradation in short-circuit current and open-circuit voltage. Crucially, the millisecond-scale FLA treatment prompted a major recovery by rapidly releasing the fixed electrostatic charges accumulated in the front silicon nitride passivation layer, successfully returning performance parameters almost entirely to baseline.