Presentation Information

[10p-B11-1]Numerical Investigation of Emission Enhancement from β-Ga2O3 Color Centers Using an External Silicon Ring Resonator

〇(M2)ZIYI CHEN1, Yun Jia1, Guangtai Lu1, Natthajuks Pholsen2, Riena Jinno1, Satoshi Iwamoto1,2 (1.RCAST Univ. Tokyo, 2.IIS Univ. Tokyo)

Keywords:

Purcell effect,beta-gallium oxide,color center

Recent reports of single-photon emission and telecom-band luminescence have highlighted the potential of β-Ga2O3 color centers as quantum light sources. However, direct fabrication of nanophotonic structures on β-Ga2O3 remains challenging. Here, we numerically investigate spontaneous emission enhancement using an external silicon ring resonator on a β-Ga2O3 substrate. FDTD simulations reveal a resonant mode near 1.32 μm with a quality factor of 2.34 × 104 and a mode volume of 4.8 (λ/n)3. The Purcell factor is evaluated theoretically and by direct calculations. The theoretical results show that a Purcell factor of approximately 8 can be maintained even when the emitter is located 200 nm below the interface. Direct calculations exhibit a similar trend despite slight discrepancies attributed to multimode competition. These results demonstrate the potential of external photonic nanostructures for enhancing β-Ga2O3 color-center emission.