Presentation Information
[10p-PA3-33]Magnetic Response of CoFeB to Voltage Application on Ferroelectric AlScN
〇Kazushi Onimura1, Hiroyuki Kobayashi2, Yan Wu1, Satoru Yoshimura3, Kuniyuki Kakushima1 (1.Institute of Science Tokyo, 2.Sumitomo Chemical Collaborative Research Cluster, 3.Akita Univ)
Keywords:
frromagnetic,ferroelectric,VCMA
Magnetization control utilizing the VCMA effect, which holds promise for applications such as magnetic memory, is typically achieved by applying an electric field to a dielectric film. However, we have been working to replace this dielectric film with a ferroelectric material in order to realize a non-volatile VCMA effect. In this study, we report our observations of the continuous changes in the magnetization of a ferromagnetic film as a result of voltage sweeping across the ferroelectric film.