Presentation Information
[10p-PA3-39]Feasibility study of electrical spin-state detection in diamond NV centers based on spin-dependent tunneling
〇(M1)Keitaro Higashikawa1, Shunki Nakamura2, Morio Kawashima3, Hiroki Morishita2,4, Shinobu Onoda5, Yuichiro Ando1 (1.Osaka Metropolitan Univ., 2.CSIS, Tohoku Univ., 3.Tohoku Univ., 4.WPI-AIMR, Tohoku Univ., 5.National Institutes for Quantum Science and Technology)
Keywords:
Nitrogen-vacancy centers in diamond,spin-dependent tunneling
Nitrogen-vacancy (NV) centers in diamond are promising candidates for solid-state qubits owing to their excellent spin coherence properties. Scaling up NV-based quantum information systems requires reducing the spacing between neighboring qubits. However, optical techniques are fundamentally limited by diffraction, making individual qubit addressing increasingly challenging at short distances. Electrical detection of NV spin states using ferromagnetic electrodes would provide an attractive route toward scalable qubit architectures. In this work, we investigate the feasibility of electrically detecting NV spin states through spin-dependent tunneling. Diamond substrates with NV centers (~2 nm deep) were fabricated via N-ion implantation and coupled with a 10-nm Co film. PL measurements show positive bias converts NV- to NV0 (electron extraction), while negative bias restores NV-. This enables electrical NV charge-state control toward spin-dependent tunneling detection.