[10p-PA4-1~20] 12.2 Characterization and Materials Physics

[10p-PA4-14] Anisotropy of Strain Effect in n-Type Organic Semiconductor Single Crystal

〇(B)Toshihiro Koizumi¹, Keita Yaegashi², Junto Tsurumi², Shohei Kumagai⁵, Qianmin Ye², Junyi Zhu², Pushi Wang², Ryohei Kameyama², Zijing Guo², Shusaku Imajo², Toshihiro Okamoto^3,5, Jun Takeya^2,3,4 (1.Dept. of Appl. Chem., Univ. of Tokyo., 2.GSFS, Univ. of Tokyo., 3.JST CREST, 4.NIMS, 5.Science Tokyo)

Keywords:

n-type organic semiconductor,strain,anisotropy

Although a negative piezoresistive effect induced by uniaxial strain has been reported in n-type OSCs, the influence of strain direction on charge transport properties remains insufficiently understood. In this study, we investigated the anisotropy of strain response in single crystals of PhC2-BQQDI, a high-mobility n-type organic semiconductor that forms a brickwork molecular packing structure. By comparing the electronic states under different strain directions, we discuss the correlation between electron transport properties and molecular vibrations, as well as the mechanism underlying the anisotropy of the strain response.