Presentation Information
[10p-PB3-27]Pt-spacer-modified magnetization reversal in thick Co/Pt multilayers for three-dimensional domain-wall memory
〇Wentao Li1, Dongchan Jeong1, Yoichi Shiota1,2, Hisakazu Matsuki1,2, Shutaro Karube1,2, Ryusuke Hisatomi1,2, Teruo Ono1,2,3 (1.ICR, Kyoto Univ., 2.CSRN, Kyoto Univ., 3.SRIS, Tohoku Univ.)
Keywords:
3D Domain Wall Memory
Three-dimensional domain-wall memory is a promising concept for high-density magnetic storage, where information is stored and shifted by magnetic domains or domain walls. For this purpose, thick Co/Pt multilayers with perpendicular magnetic anisotropy are important candidate structures. However, simply increasing the Co/Pt repetition number can modify the magnetization reversal process. In this study, we investigate the thickness-dependent reversal behavior of sputtered Co/Pt multilayers by MOKE measurements. The hysteresis loops change from square-like PMA loops to broadened and slanted reversal with increasing Co/Pt repetition number. We also examine thick Co/Pt multilayers with an inserted 2-nm Pt spacer and compare their MOKE loops with a continuous Co/Pt multilayer. The observed change in switching behavior suggests that Pt spacer insertion may influence the reversal process of thick Co/Pt multilayers.