Presentation Information
[10p-PB3-32]SOT-channel-dimension dependence of magnetization switching and high-speed pulse characterization in in-plane SOT-MTJs
〇Sumito Tsunegi1,2, Tatsuya Yamamoto3, Yuki Hibino3 (1.Kyutech, 2.Neuromorph Center, 3.AIST)
Keywords:
Spintronics,spin-orbit torque,MRAM
We systematically evaluated the magnetization switching characteristics of spin-orbit torque (SOT) devices with different channel widths toward low-power SOT-MRAM applications. The switching voltage, switching current, and write energy were extracted from DC and pulsed measurements, and their channel-width dependence was investigated. These results provide insight into the impact of device dimensions on SOT switching efficiency. Furthermore, device-to-device variation was evaluated based on statistical measurements of multiple devices. From these experimental results, we discuss design guidelines for energy-efficient and reliable SOT-MRAM devices.