[10p-S5-1~14] 3.12 Semiconductor optical devices

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[10p-S5-12] Development of High-Gain ZnSe-Based Organic–Inorganic Hybrid UV-APDs and
Verification of Geiger-Mode Operation

〇Shinta Kurisu¹, Yuta Sakaguchi¹, Arisa Hirata¹, Takashi Fujii¹, Tomomi Wakahata¹, Takumi Ose¹, Abe Tomoki¹, Kazuaki Akaiwa¹, Kunio Ichino¹ (1.Tottori Univ.)

Keywords:

ZnSe-based avalanche photodiode,organic-inorganic hybrid structure,Geiger-mode

In this study, an organic–inorganic hybrid ultraviolet avalanche photodiode (APD) was fabricated using a ZnSe-based semiconductor grown by molecular beam epitaxy (MBE) and PEDOT as a hole transport layer. APD exhibiting high gain was evaluated under Geiger-mode operation by applying a reverse bias above the breakdown voltage. Pulse detection measurements were carried out to investigate the feasibility of Geiger-mode operation and single-photon-sensitive UV detection. The results demonstrate the effectiveness of the metal-mask structure for improving APD performance and provide insight into the potential application of ZnSe-based hybrid APDs in high-sensitivity ultraviolet photodetection.