Presentation Information
[11a-A33-7]Electronic structure changes induced by alkali metal deposition on the organic Mott insulator β′-(BEDT-TTF)2ICl2 studied by angle-resolved photoelectron spectroscopy
〇Yuto Ishida1, Keisuke Fukutani2, Kohki Mizukami2, Ryotaro Nakazawa1, Takuya Kobayashi3, Taketoshi Minato2,5, Hiromi Taniguchi4, Satoshi Kera1,2 (1.Chiba Univ., 2.IMS, 3.Hokkaido Univ., 4.Saitama Univ, 5.Spin-L)
Keywords:
Angle-resolved photoelectron spectroscopy,Mott insulator,BEDT-TTF
Electronic-state changes induced by electron doping were investigated in the organic Mott insulator β′-(BEDT-TTF)2ICl2 by potassium surface deposition and angle-resolved photoelectoron spectroscopy. An increase in the K 3p core-level intensity and changes in the valence-band spectra were observed with increasing K deposition. In contrast to transition-metal-oxide Mott insulators, neither the formation of in-gap states nor metallic behavior was observed. The electron-doping response in the organic Mott insulator β′-(BEDT-TTF)2ICl2 will be discussed.