[11a-C213-1~12] 3.5 Ultrashort-pulse and high-intensity lasers

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[11a-C213-4] Sub-picosecond pulse generation from gain-switched single-mode DFB semiconductor lasers at room temperature

〇(D)Yihan Qi¹, Fuyi Cao¹, Hidekazu Nakamae¹, To-Fan Pan¹, Changsu Kim¹, Masataka Kobayashi¹, Cong Wang¹, Shaoqiang Chen^1,2, Takashi Ito³, Hidefumi Akiyama^1,3 (1.ISSP, Univ. of Tokyo, 2.Dept. of Elec. Eng., East China Normal Univ., 3.LDseed)

Keywords:

Semiconductor laser,Sub-picosecond light source,Ultrafast spectroscopy

We report room-temperature sub-picosecond gain-switched pulse generation from an optically pumped surface-grating distributed-feedback (SG-DFB) semiconductor laser. The device employs GaAs/AlGaAs multiple quantum wells and emits at 826 nm on the high-energy side of the gain spectrum. A home-built mode-locked fiber laser was used as the excitation source. The temporal and spectral characteristics were investigated using a synchronized streak camera, a high-resolution spectrometer, and a home-built non-collinear intensity autocorrelator. A pulse width of 0.8 ps was obtained from autocorrelation measurements and was further compressed to 0.6 ps using a single-mode fiber for chirp compensation. These results extend gain-switched semiconductor lasers from the picosecond regime into the sub-picosecond regime and demonstrate their potential as compact and highly integrated ultrafast light sources for future photonic integrated systems and optical interconnects.