Presentation Information
[11a-E217-8]Influence of ZnS on Formation and Conductivity of Femtosecond Laser Induced Tellurium Patterns on K2O-WO3-TeO2 Glass
〇Namkyong Kim1, Tetsuo Kishi1, Kana Tomita1, Tetsuji Yano1, Haruki Kawaguchi2, Hiyori Uehara2 (1.Science Tokyo, 2.NIFS)
Keywords:
tellurite glass,tellurium semiconductor nanocrystal,femtosecond laser
Tellurium (Te) exhibits naturally p-type narrow band gap semiconductor behavior; however, nanostructure fabrication remains challenging. By irradiating tellurite glass with a femtosecond laser, it is also possible to form a linear conductive path made of Te crystal. In previous research, we have shown that the amount of Te precipitated during laser irradiation can be controlled by adding a reducing agent to tellurite glass. Especially, ZnS addition could promote Te precipitation. In this presentation, we will discuss the effects of reducing agents on the conductivity of Te wires by measuring the resistance of line-shaped modified areas formed by laser irradiation.