[11a-N304-1~11] 17.2 Fundamental properties

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[11a-N304-10] Carrier accumulation in thin films of transition metal dichalcogenides

〇Mina Maruyama¹, Yanlin Gao¹ (1.Univ. of Tsukuba)

Keywords:

transition metal dichalcogenides,carrier accumulation,electronic structure

We investigate carrier accumulation in thin films of transition metal dichalcogenides (TMDs) using density functional theory with the effective screening medium method. Our calculations show that carrier accumulation in thin films is sensitive to the carrier species, concentration, and constituent atoms. We find that the accumulated carrier is highly localized on the outermost layer for the NbS₂ thin film, while the carrier penetrates into the third sublayer for the WS₂ thin film.