Presentation Information
[11a-N304-9]Structure modulation of TMDs induced by an external electric filed
〇YANLIN GAO1, Okada Susumu1 (1.University of Tsukuba)
Keywords:
Transition-metal dichalcogenides (TMDs),Electric filed,Structure modulation
Transition-metal dichalcogenides (TMDs) have attracted considerable attention due to their tunable electronic structure and potential applications across a wide range of fields, including nanoelectronics, optoelectronics, and spintronics. An external electric field is essential for operating electronic devices based on these TMDs, as it can modulate their electronic structures [1]. Additionally, an external electric field was found to induce variation in their geometries. For example, the lattice parameter of graphene increased monotonically with increasing hole-doping concentration, while the lattice constant was insensitive to electron doping [2]. However, it is still unclear how the external electric field affects the geometric structure of TMDs. Therefore, in this work, we investigated the geometric structures of TMDs under an external electric field by using the density functional theory combined with the effective screening medium method (Fig. 1).
Our calculation shows that the geometric structure of TMDs strongly depends on the carrier concentration, carrier species, and constituent elements. The lattice constant of TMDs containing Se atoms shows a weak dependence on the carrier concentration, whereas that of TMDs containing S atoms increases with increasing carrier concentration.
Our calculation shows that the geometric structure of TMDs strongly depends on the carrier concentration, carrier species, and constituent elements. The lattice constant of TMDs containing Se atoms shows a weak dependence on the carrier concentration, whereas that of TMDs containing S atoms increases with increasing carrier concentration.