[11a-S2-1~11] 12.1 Fabrications and Structure Controls

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-S2-8] Cooling-Rate Dependence of Crystallization Behavior and Morphology
in C8-BTBT Liquid-Crystalline Precursor Films

〇(M2)Shunya Sobue¹, Keita Aizawa¹, Naoya Haruta¹, Eita Shoji¹, Shingo Maruyama², Kenichi Kaminaga¹, Yuji Matsumoto¹ (1.Tohoku Univ., 2.Shizuoka Univ.)

Keywords:

liquid crystal,wetting phenomena,precursor film

We investigated the crystallization behavior of precursor films of the liquid-crystalline organic semiconductor material C8-BTBT, a phenomenon related to wetting known as the precursor film. Monomolecular precursor films were grown on Si substrates in the liquid crystal phase of C8-BTBT and cooled using different temperature profiles, after which the samples were observed by polarized optical microscopy. The results showed that slow cooling from the liquid crystal phase to room temperature caused the precursor film to aggregate into dendritic crystals, whereas rapid quenching preserved the monomolecular film structure. In addition, after quenching, a domain structure with a spatial distribution in domain size was observed.