Presentation Information
[11p-B32-2]Proposal of Van der Waals Epitaxy and Its Subsequent Development
〇Atsushi Koma1 (1.Univ. Tokyo)
Keywords:
van der Waals epitaxy,crystal growth,artificial material
The present talk describes the history of the proposal and demonstration of van der Waals epitaxy, which enables the stacked growth of single-crystalline layers of two different materials without lattice-matching constraints. We will introduce its applications to one-dimensional materials such as Se and Te, and two-dimensional layered materials such as transition metal dichalcogenides, and epitaxial growth onto pseudo-Van der Waals surfaces where active bonds on the substrate surface are terminated with appropriate atoms, as well as the van der Waals epitaxial growth of organic molecular crystals such as C60 and phthalocyanine. The paper also touches on the future prospects of van der Waals epitaxy.