[8a-B32-1~11] 12.2 Characterization and Materials Physics

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[8a-B32-11] Bottom gate electric double layer transistor with organic semiconductor single crystals

〇(M2)Leo Koshiba¹, Mizuki Abe¹, Pushi Wang¹, Tomoki Furukawa¹, Zijing Guo¹, Shusaku Imajo¹, Jun Takeya^1,2,3 (1.Univ. of Tokyo, 2.JST CREST, 3.NIMS)

Keywords:

organic semiconductor

In recent years, the metal-insulator transition in organic semiconductor transistors has been reported, achieved through high-density carrier accumulation on the surface of organic semiconductor single crystals using ionic-liquid-based electric double-layer transistors (EDLTs). To enable a detailed discussion on the physical properties of organic semiconductors in high-carrier-density states, we investigated a novel device architecture. By forming an electric double layer from the bottom of the organic semiconductor for carrier injection, this structure allows for various measurements beyond electrical transport, such as surface characterization and optical response measurements.