[8a-E207-1~11] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[8a-E207-3] Optical observation of spin dynamics in a modulation-doped (001) AlGaAs/GaAs heterostructure suitable for electrical spin injection

〇Kento Sugawara¹, Jun Ishihara¹, Daiki Sekine^2,1, Sota Yamamoto¹, Masako Suzuki-Sakamaki¹, Mineto Ogawa³, Tetsuya Uemura³, Makoto Kohda^1,2,4,5,6 (1.Grad.School of Eng., Tohoku Univ., 2.QUARC, QST, 3.Hokkaido Univ., 4.CSIS, Tohoku Univ., 5.DEFS, Tohoku Univ., 6.AIME, Tohoku Univ)

Keywords:

Spin-orbit interaction,AlGaAs/GaAs,Kerr rotation

To investigate spin dynamics in a conventional modulation-doped (001) AlGaAs/GaAs heterostructure compatible with electrical spin injection, we performed photoluminescence and time-resolved magneto-optical Kerr rotation measurements at T = 5 K. The PL spectrum under 780 nm excitation showed emission peaks around 804 nm and 818 nm, suggesting multiple optical transitions in the sample. Kerr rotation signals were observed at different probe wavelengths, and their amplitude and sign depended on the probe wavelength. Based on these optical measurements, we investigate the origin of the observed spin signals in the present modulation-doped AlGaAs/GaAs heterostructure.