Presentation Information
[8p-A33-3]Layer dependence of Polarity of Gas-sensing Response in MoS2/MoOx heterostructure
〇(D)Yuxiang Shen1, Ryo Toyoshima1, Ken Uchida1 (1.Eng., UTokyo)
Keywords:
MoS2,gas sensing,heterostructure
Two-dimensional (2D) materials and their heterostructures are promising platforms for gas-sensing owing to their high sensitivity. However, most reported 2D sensors still rely on a chemiresistive readout, which limits molecular recognition and makes the physical origin difficult to elucidate. In this work, we develop a device-level 2D MoS2/MoOx heterostructure platform and reveal an anomalous transition in the polarity of the gas-sensing response, governed by both MoS2 layer number and in-plane device geometry, which arises from the coupling between competitive adsorption sites and an asymmetric carrier distribution across the heterointerface. These findings establish a physical basis for tunable gas-sensing polarity in 2D heterostructures and provide a design strategy for gas sensors with enhanced molecular recognition capability.