Presentation Information
[8p-C212-12]Random Laser Generation Using SnS2 and Ni-Doped WO3 as Scattering Centers in Rhodamine 6G Dye
〇(BC)Luiz Felipe Silva1, Vitor de Sa2, Ian Andrade1, Ana Carvalho3, Guilhermina Teixeira2, Hugo Mello1, Martin Barbosa3, Leonardo de Boni2, Leandro Cocca1 (1.IF-UFG, 2.IFSC-USP, 3.IQ-UFG)
Keywords:
Random Laser,Semiconductor,Multiple scattering
Random lasers rely on multiple scattering in disordered media to provide optical feedback without conventional resonant cavities. In this work, SnS2 and Ni-doped WO3 prepared with WO3 ratios of 1:1 and 1:0.5 were employed as scattering centers in Rhodamine 6G solutions. The samples were optically pumped with a pulsed 532 nm Nd laser, and the emission spectra were recorded as a function of excitation energy. Random laser emission was observed for all investigated materials, accompanied by spectral narrowing from approximately 40–50 nm to ~3 nm. The lasing thresholds were 0.8 mJ for SnS2, 1.1 mJ for WO3 (1:1), and 0.5 mJ for WO3 (1:0.5). The results indicate that both SnS2 and Ni-doped WO3 can act as efficient scattering media for dye-based random lasers, with the WO3 (1:0.5) sample exhibiting the lowest threshold.