Presentation Information
[8p-E201-6]Achieving High-Voltage Tolerance in Metal Halide Perovskite Rectifier Diodes through Interface and Additive Engineering
〇(D)Ryan Nur Iman1, Neng Hani Handayani1, Md. Shahiduzzaman1, Tetsuya Taima1, Makoto Karakawa1, Masahiro Nakano1 (1.Kanazawa Univ.)
Keywords:
Perovskite Rectifying Diode,Interface Engineering,Voltage Tolerance
Metal halide perovskites are promising for electronic and optoelectronic devices owing to their low-cost solution processability, excellent optoelectronic properties, and efficient charge transport. Herein, we report a low-voltage perovskite rectifying diode developed via a combined interface and additive engineering strategy. The device was fabricated by sequential deposition of SnO2/CsFAPbI3 on FTO followed by Ag evaporation. Although the pristine CsFA based device exhibited a low turn-on voltage, repeated voltage cycling induced performance degradation. To address these issues, an RbI interlayer and 1-hexyl-3-methylimidazolium chloride (HMIM-Cl) were introduced. RbI passivated oxygen-vacancy defects, while HMIM-Cl coordinated with undercoordinated Pb2+, enhancing charge transport and mitigating AgI formation. Consequently, the optimized RbI/HMIM-Cl-assited CsFAPbI3 perovskite device achieved an ~8-fold higher rectification ratio and improved voltage tolerance during voltage cycling.