Presentation Information
[8p-E203-5]Magneto-thermoelectric Response and Electronic Structure in Composition-Gradient Heusler-type Fe2VAl Thin Films
〇(M2)Taketo Nakashima1,2, Hidetoshi Miyazaki1, Weinan Zhou2, Yuya Sakuraba2 (1.Nitech, 2.NIMS)
Keywords:
Thermoelectric materials,Density of States,compositionally graded thin films
In thermoelectric Fe2.2V0.8Al-based full-Heusler alloys, the magnetothermoelectric response of epitaxially strained thin films remains unexplored. In this study, we fabricated compositionally graded thin films of the Fe2.2V0.8Al parent phase and evaluated the Seebeck coefficient under an applied magnetic field. As a result, unlike bulk materials, an enhancement in the absolute value of the Seebeck coefficient induced by the magnetic field was observed. This is attributed to the contribution of anisotropic magnetothermoelectric power arising from structural anisotropy. Our findings present a novel material design guideline utilizing lattice strain.
