Presentation Information
[8p-E208-7]Evaluation of spin-accumulation dependence toward understanding the magneto-photogalvanic effect
〇(M2)Ayaka Kamiryo1, Mahiro Yamamoto2, Taiki Nishijima2, Ryo Ohshima2, Masashi Shiraishi2, Yuichiro Ando1 (1.Osaka Metropolitan Univ., 2.Kyoto Univ.)
Keywords:
magneto-photogalvanic effect,spin accumulation,spin Hall effect
We previously reported a unidirectional photocurrent generated at the edges of metallic thin wires under simultaneous DC current injection and linearly polarized light irradiation. This phenomenon is attributed to the magneto-photogalvanic effect (MPGE), which arises when both inversion and time-reversal symmetries are broken. In contrast to conventional MPGE, where these symmetries are typically broken by an external magnetic field or magnetization, our system utilizes spin accumulation induced by the spin Hall effect (SHE) together with structural inversion asymmetry at the Hall-bar edge.While earlier studies focused on representative spin Hall materials such as Pt and β-W, a systematic investigation across a wider range of materials is necessary to clarify the relationship between SHE and MPGE. In this study, we evaluate MPGE in various materials and examine its correlation with different angular momentum generation mechanisms.