Presentation Information
[9a-E206-1][JSAP-Optica Joint Symposia Invited Talk] Selective growth of armchair MoS2 nanotubes at the 1-nm limit
〇Yusuke Nakanishi1 (1.AdvMaterSci, UTokyo)
Keywords:
inorganic nanotube,MoS2,semiconductor
Atomically thin nanotubes of semiconducting transition metal dichalcogenides offer a platform for exploring quantum phenomena at the one-dimensional limit and for realizing nanoscale transistor channels. Yet, conventional syntheses produce only large-diameter (>10 nm), multiwalled tubes with uncontrolled chiralities. We report the synthesis of single-walled molybdenum disulfide (MoS2) nanotubes with diameters approaching ~1 nm, achieved through spatially confined reactions inside boron nitride (BN) nanotubes. The confined geometry stabilizes otherwise inaccessible, highly strained MoS2 nanotubes, yielding structurally well-defined armchair configurations. Their bandgaps shrink systematically with decreasing diameter, in accord with long-standing theoretical predictions. The insulating BN sheath simultaneously provides an intrinsic gate-all-around architecture, thereby promising access to truly nanoscale transistor channels.