Presentation Information
[9a-E207-8]Ab Initio Quasiparticle Band Structure of Bi2Se3 : Strain-Induced Effects
〇Jun Inagaki1, Yogendra Kumar1, Kenya Shimada1,2,3 (1.HiSOR, 2.RISE, 3.WPI-SKCM2)
Keywords:
topological insulator,GW approximation,strain-induced effect
Bi2Se3 is a representative topological insulator and has been intensively studied for both device applications and fundamental research. In this study, we investigated strain-induced effects on its electronic band structure using first-principles calculations. At the mean-field level, compressive strains shift the valence band states near the point upward, whereas tensile strains shift them downward.
In the presentation, we also report the results within the GW approximation and compare them with the experimental results.
In the presentation, we also report the results within the GW approximation and compare them with the experimental results.