Presentation Information
[9a-PA1-1]Polarity inversion in ScAlN induced via element doping and post-deposition annealing
〇Sri Ayu Anggraini1, Masato Uehara1, Kenji Hirata1, Kodai Niitsu2, Morito Akiyama1 (1.AIST, 2.NIMS)
Keywords:
piezoelectric,polarity inversion,ScAlN
Beyond-5G/6G communications require bulk acoustic wave (BAW) resonators operating at higher frequencies and wider bandwidths. A common strategy for achieving higher frequency operation typically involves reducing the thickness of the piezoelectric layer which may degrade the performance of the device [1]. Since the discovery of scandium aluminium nitride (ScAlN) [2], ScAlN has emerged as the most promising nitride piezoelectric material for BAW filter applications. Among available approaches, stacking metal (M)-polar and nitrogen (N)-polar ScAlN offer a promising route to achieve higher-frequency operation without significantly reducing the thickness of the piezoelectric layer. Since the polarity can affect device functionality, controlling the polarity of ScAlN is essential. In this study proposes the addition of different element and post deposition annealing as a method to control the polarity of ScAlN.
References:
[1] Izhar et al. Microsystems & Nanoengineering, 11 (2025) 19.
[2] M. Akiyama et al, Adv. Mater. (2009) 21, 593.
References:
[1] Izhar et al. Microsystems & Nanoengineering, 11 (2025) 19.
[2] M. Akiyama et al, Adv. Mater. (2009) 21, 593.