Presentation Information
[9a-PA1-14]Microgap-Regulated Growth of SiC Nanostructures on Si via a Close-Spaced Technique
Pengyu Zhang1,2, 〇Wipakorn Jevasuwan2, Naoki Fukata1,2 (1.Univ. Tuskuba, 2.NIMS)
Keywords:
SiC,nanowire,close-spaced teachnique
Silicon carbide (SiC) is widely acknowledged as a promising material for electronic applications owing to its superior physical and electrical properties. Its wide bandgap, high thermal conductivity, and outstanding high-temperature reliability make SiC particularly attractive for power electronics, including electric vehicle (EV) inverters and high-power conversion systems. However, achieving high-quality and continuous SiC thin films on silicon (Si) substrates remains challenging. Under low-pressure and high-temperature growth conditions, the reaction kinetics are difficult to control because low pressure promotes Si out-diffusion and surface etching, making uniform carburization difficult. To address these challenges, we developed a gap gas-flow-regulated growth method based on a modified close-spaced technique (CST). In this configuration, the narrow gap between two closely spaced wafers suppresses the transport of the mixed CH4/Ar gas flow within the confined space and reduces convective transport. Moreover, the confined geometry limits Si diffusion from Si nanowires.