[9a-PA4-1~34] 3.11 Nanoscale optical science and near-field optics

[9a-PA4-4] Analysis of rRectification property control of mechanism in MIM tunneling diode with metal nanoparticles for optical rectenna

〇(M1)Shun Inoue¹, Chitose Yasuhara¹, Zhen Liu¹, Hiroo Yugami¹, Makoto Shimizu¹ (1.Tohoku Univ.)

Keywords:

Optical rectenna,MIM tunnel diode

This study investigates rectification control in Pt nanoparticle-embedded metal-insulator-metal (MIM) tunnel diodes for optical rectenna applications. Optical rectennas require ultrafast diodes with high current density and current asymmetry to convert infrared radiation into direct current. A Pt/TiO2/PtNPs/TiO2/Pt structure was modeled as a double-barrier tunneling system. Three-dimensional potential distributions were calculated, and tunnel barrier profiles were used to evaluate I-V characteristics and asymmetry. The effects of electric-field concentration around Pt nanoparticles, work-function reduction due to nanoparticle surface morphology, and their combined contribution were compared. Work-function reduction increases current density, while electric-field concentration improves forward-direction asymmetry. Particle radius, spacing, and formation position affect the barrier shape. These findings indicate that Pt nanoparticle geometry is important for improving diode performance.