[9a-PB5-1~11] 12.8 Specific theme: Photoelectric Properties, Structural Controls and Device of Perovskites Materials

[9a-PB5-1] Realization of Long-Lifetime Carriers via Heavily Doped p–n Junctions and Lattice–Charge Interactions, and Their Application to Memory Devices

〇(M1)Naoki Nishizawa¹, Nishikubo Ryosuke¹, Saeki Akinori¹ (1.The Univ. of Osaka)

Keywords:

p-n junction,semiconductor,perovskite