Presentation Information

[9p-E217-5]Development of P-Type SnO Hole Transport Layer for High-Efficient Semitransparent CIGSe Solar Cells

〇Maski Hashimoto1, Yosuke Abe1, Takahito Nishimura1 (1.sicence tokyo Univ.)

Keywords:

semiconductor,solar cell,sputtering

The conversion efficiency of CIGSe solar cells has reached 23.6% through improvements in bulk quality and buffer interface quality. To further improve the conversion efficiency, we propose the insertion of Li-doped NiO (NiO) into the rear contact of CIGSe solar cells. In this presentation, we report on NiO thin films deposited by sputtering without a pressure gradient and by pressure-gradient sputtering, and investigate the sputtering-power dependence of their properties.