Presentation Information
[9p-E218-15]Revisiting a 3D Hole and 3D Electron Carrier Injection to the Quantium Well of 228 nm far-UVC LEDs: A Theoretical Study
〇Muhammad Ajmal Khan1,2, Khalid Ayub1, Hafeez Ur Rahman1, Muhammad Nawaz Sharif3, Banaras Khan2, M. Fang Wang1, Yuhuai Liu1 (1.School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, Henan 450001, China, 2.Qurtuba University of Science and Information Technology, Peshawar 25100, Pakistan, 3.Riken, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan)
Keywords:
far-UVC LED,Carrier injection Efficiency,Internal Quantum Efficiency
Far-ultraviolet-C (far-UVC) LEDs operating at 230 nm are promising for the inactivation of viruses, bacteria, and fungi in occupied environments. However, their external quantum efficiency (EQE) remains low due to poor carrier injection and severe electron and hole leakage in Al-rich AlGaN structures. In this work, a novel polarization-assisted far-UVC LED incorporating an n-type AlGaN Electron Injection Quantum Barrier (EIQB) and a p-type AlGaN Hole Injection Quantum Barrier (HIQB) is investigated using SiLENSe simulations. The proposed structure employs compositionally graded AlGaN barriers to enhance carrier confinement and balance within a four-period AlGaN quantum-well active region. Compared with a conventional reference LED using flat barriers, the polarization-assisted design significantly suppresses hole leakage toward the n-side and electron leakage toward the p-side. As a result, carrier injection efficiency (CIE) increases from ~40% to >55%. These results demonstrate an effective approach for improving the performance of next-generation high-efficiency far-UVC LEDs for disinfection of air, water, surfaces, and manned environments.