Presentation Information
[9p-E218-16]Monolithically Integrated Multi-Wavelength InGaN/GaN Photonic Crystal Nanorod Lasers for Optical Encoding Applications
〇(PC)SungUn Kim1, Yong-Ho Ra1 (1.Jeonbuk Nat. Univ.)
Keywords:
InGaN,Nanorod,Photonic crystal
Multi-wavelength photonic light sources capable of generating spectrally distinguishable optical states are essential building blocks for emerging visible light communication (VLC), optical encoding, and photonic information processing technologies. Here, we demonstrate a monolithically integrated InGaN/GaN photonic crystal nanorod platform fabricated through selective area growth on differently patterned substrates. Unlike conventional transfer-based integration approaches, which often suffer from complicated fabrication processes, structural damage, and low assembly yield, the proposed method enables direct formation of multiple wavelength-selective photonic crystal structures on a single substrate. Photonic band simulations of four nanorod photonic crystal geometries revealed Γ-edge modes suitable for highly directional surface emission. Based on these designs, InGaN/GaN photonic crystal nanorods were grown using a patterned TiN mask in a plasma-assisted molecular beam epitaxy (PA-MBE) system. Micro-photoluminescence measurements showed distinct lasing wavelengths at 502, 508, 513, and 520 nm, corresponding to the four photonic crystal structures. Furthermore, the four spectrally distinct lasing channels were utilized as optical encoding states, achieving a classification accuracy of 97% on the MNIST handwritten digit dataset. These results demonstrate the feasibility of wavelength-encoded optical information processing using monolithically integrated photonic crystal nanorod lasers. The demonstrated platform provides multiple wavelength-selective lasing channels within a single epitaxial structure, offering a scalable approach for compact optical encoders, wavelength-division VLC systems, and future photonic computing architectures.