Presentation Information
[9p-E219-9]Silicon-Based Optically-Pumped GeSn Micro-Ring Lasers
〇(M2)Chun Yi Tsai1, Wei Cheng Hsu1, Guo En Chang2 (1.National Cheng Chung Univ., 2.National Yang Ming Chiao Tung Univ.)
Keywords:
Micro-disk,Silicon Photonics,GeSn Alloys
Silicon-germanium-tin (SiGeSn) technology offers potential for integrating silicon-based electronics and photonics seamlessly. In this study, we present optically-pumped GeSn micro-ring lasers on silicon designed for silicon photonics applications.
The investigated sample was synthesized via reduced-pressure chemical vapor deposition (RPCVD) on a Si substrate. A 570-nm Ge buffer layer was first deposited to mitigate lattice mismatch, followed by a 1300-nm low-temperature GeSn active layer to suppress Sn segregation. XRD analysis confirmed a Sn incorporation of 11.7%. Using CMOS-compatible processing, the sample was patterned into micro-ring resonators and exhibiting smooth waveguide sidewalls. Under optical pumping via a 1064 nm pulsed laser (502 kW/cm²), the device demonstrated clear direct-bandgap lasing action at 77 K. A sharp emission peak was resolved at 2309 nm with a narrow linewidth of ~10 nm, and lasing behavior was sustained at temperatures up to 110 K. Furthermore, FEM simulations confirmed excellent optical confinement via whispering gallery modes (WGMs). These results demonstrate a novel GeSn micro-laser leveraging a compact micro-ring configuration for high-density electronic-photonic integrated circuits.
The investigated sample was synthesized via reduced-pressure chemical vapor deposition (RPCVD) on a Si substrate. A 570-nm Ge buffer layer was first deposited to mitigate lattice mismatch, followed by a 1300-nm low-temperature GeSn active layer to suppress Sn segregation. XRD analysis confirmed a Sn incorporation of 11.7%. Using CMOS-compatible processing, the sample was patterned into micro-ring resonators and exhibiting smooth waveguide sidewalls. Under optical pumping via a 1064 nm pulsed laser (502 kW/cm²), the device demonstrated clear direct-bandgap lasing action at 77 K. A sharp emission peak was resolved at 2309 nm with a narrow linewidth of ~10 nm, and lasing behavior was sustained at temperatures up to 110 K. Furthermore, FEM simulations confirmed excellent optical confinement via whispering gallery modes (WGMs). These results demonstrate a novel GeSn micro-laser leveraging a compact micro-ring configuration for high-density electronic-photonic integrated circuits.